Near-field relaxation of a quantum emitter to 2D semiconductors: surface dissipation and exciton polaritons

摘要

The total spontaneous emission rate of a quantum emitter in the presence ofan infinite MoS\textsubscript{2} monolayer is enhanced by several orders ofmagnitude, compared to its free-space value, due to the excitation of surfaceexciton polariton modes and lossy modes. The spectral and distance dependenceof the spontaneous emission rate are analyzed and the lossy-surface-wave,surface exciton polariton mode and radiative contributions are identified. Thetransverse magnetic and transverse electric exciton polariton modes can beexcited for different emission frequencies of the quantum emitter, and theircontributions to the total spontaneous emission rate are different. Tocalculate these different decay rates, we use the non-Hermitian description oflight-matter interactions, employing a Green's tensor formalism. The distancedependence follows different trends depending on the emission energy of quantumemitter. For the case of the lossy surface waves, the distance dependencefollows a $z^{-n}$, $n=2,3,4$, trend. When transverse magnetic excitonpolariton modes are excited, they dominate and characterize the distancedependence of the spontaneous emission rate of a quantum emitter in thepresence of the MoS\textsubscript{2} layers. The interaction between a quantumemitter and a MoS\textsubscript{2} superlattice is investigated and we observea splitting of the modes supported by the superlattice. Moreover, a blue shiftof the peak values of the spontaneous emission rate of a quantum emitter isobserved as the number of layers is increased. The field distribution profiles,created by a quantum emitter, are used to explain this behavior.